Title :
Preparation of PbTiO3 thin films by photo-MOCVD
Author :
Shimizu, Masaru ; Katayama, Takuma ; Shiosaki, Tadashi ; Kawabata, Akira
Author_Institution :
Dept. of Electron., Kyoto Univ., Japan
Abstract :
PbTiO3 thin films have been grown successfully by photo-metalorganic chemical vapor deposition (MOCVD) at a temperature range of 400-700°C, using tetraethyl lead [Pb(C2H5 )4], titanium tetraisopropoxide [Ti(i-OC3H 7)4] and oxygen as source materials. The growth rate and structural nature of PbTiO3 films were affected by the substrate temperature, gas flow rate and photo irradiation. Only when films were grown by photo-MOCVD were PbTiO3 films with a single perovskite structure obtained at substrate temperatures higher than 600°C and highly (111)-oriented PbTiO3 film grown at a substrate temperature of 600°C. Dielectric properties of the obtained films were also investigated
Keywords :
chemical vapour deposition; ferroelectric thin films; lead compounds; 400 to 700 degC; PbTiO3 thin films; dielectric properties; perovskite structure; photo-MOCVD; tetraethyl lead; titanium tetraisopropoxide; Amorphous materials; Argon; Crystallization; Fluid flow; MOCVD; Photochemistry; Substrates; Temperature dependence; Transistors; X-ray diffraction;
Conference_Titel :
Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on
Conference_Location :
Urbana-Champaign, IL
Print_ISBN :
0-7803-0190-0
DOI :
10.1109/ISAF.1990.200343
