Ultra low power: Emerging devices and their benefits for integrated circuits

Author

Ionescu, Adrian M. ; De Michielis, Luca ; Dagtekin, Nilay ; Salvatore, Giovanni ; Cao, Ji ; Rusu, Alexandru ; Bartsch, Sebastian

Author_Institution

Nanoelectronic Devices Lab., Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland

fYear

2011

fDate

5-7 Dec. 2011

Abstract

In this paper we analyze and discuss the characteristics and expected benefits of some emerging device categories for ultra low power integrated circuits. First, we focus on two categories of sub-thermal subthreshold swing switches Tunnel FETs and Negative Capacitance (NC) FETs and evaluate their potential advantages for digital and analog design, compared to CMOS. Second, we investigate the combined low power and novel integrated functionality in some hybrid Nano-Electro-Mechanical (NEM) devices: the Resonant Body (RB) Fin FET for nW time reference ICs and dense arrays of Suspended Body (SB) Double Gate (DG) Carbon Nanotube (CNT) FET for low power analog/RF and integrated sensor arrays.

Keywords

MOSFET; carbon nanotube field effect transistors; low-power electronics; nanoelectromechanical devices; sensor arrays; analog design; dense arrays; digital design; hybrid nano-electro-mechanical devices; integrated sensor arrays; low power analog-RF; nW time reference IC; negative capacitance FET; resonant body FinFET; subthermal subthreshold swing switches tunnel FET; suspended body double gate carbon nanotube FET; ultra low power integrated circuits; CMOS integrated circuits; Capacitance; FETs; Inverters; Logic gates; MOSFET circuits; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2011 IEEE International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

978-1-4577-0506-9

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2011.6131563

Filename

6131563