Title :
Epitaxial growth of ferroelectric Pb(Zr0.9Ti0.1 )O3 films by reactive sputtering of multi metal target
Author :
Okamura, Takeshi ; Adachi, Masatoshi ; Shiosaki, Tadashi ; Kawabata, Akira
Abstract :
Ferroelectric epitaxial Pb(Zr0.9Ti0.1)O3 thin films have been successfully obtained on platinum-coated sapphire substrates by reactive sputtering of the multimetal target. The films with a perovskite structure have been epitaxially grown at substrate temperatures of 600-620°C. The crystallinity of the Pb(Zr0.9Ti0.1 )O3 film depended on the substrate temperature and the crystallinity of the platinum film used as a bottom electrode. The remanent polarization and the coercive field of a 0.75-μm-thick film were measured as 13.9 μC/cm2 and 60.0 kV/cm, respectively
Keywords :
epitaxial layers; ferroelectric thin films; lead compounds; sputter deposition; 600 to 620 degC; PZT; Pb(Zr0.9Ti0.1)O3; PbZrO3TiO3; coercive field; crystallinity; ferroelectric epitaxial thin films; growth; multimetal target; perovskite structure; reactive sputtering; remanent polarization; Crystallization; Electrodes; Epitaxial growth; Ferroelectric films; Ferroelectric materials; Platinum; Polarization; Sputtering; Substrates; Temperature dependence;
Conference_Titel :
Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on
Conference_Location :
Urbana-Champaign, IL
Print_ISBN :
0-7803-0190-0
DOI :
10.1109/ISAF.1990.200344
