DocumentCode
3037619
Title
Benefits of dopant profile approach using spreading resistance profiling
Author
Lim Saw Sing ; Lim Siew Ping
Author_Institution
Infineon Technol. (Kulim) Sdn Bhd, Kedah Darul Aman, Malaysia
fYear
2013
fDate
15-19 July 2013
Firstpage
233
Lastpage
237
Abstract
The paper illustrates the success of adapting spreading resistance profiling (SRP) to identify any abnormality related to epitaxial. It has been proven that SRP becomes complementary approach for conventional cross section with wet chemical delineation doping profile techniques. The application of SRP on epitaxial process monitoring is also described.
Keywords
doping profiles; semiconductor doping; SRP; dopant profile approach; epitaxial; epitaxial process monitoring; spreading resistance profiling; wet chemical delineation doping profile technique; Contacts; Decision support systems; Failure analysis; Integrated circuits; Physics; Presses; Resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location
Suzhou
ISSN
1946-1542
Print_ISBN
978-1-4799-1241-4
Type
conf
DOI
10.1109/IPFA.2013.6599159
Filename
6599159
Link To Document