DocumentCode :
3037622
Title :
An investigation into the factors affecting the sol-gel processing of PZT thin layers
Author :
Lakeman, Charles D E ; Campion, Jean-Florent ; Suchicital, Carlos T A ; Payne, David A.
Author_Institution :
Illinois Univ., Urbana, IL, USA
fYear :
1990
fDate :
6-8 Jun 1990
Firstpage :
681
Lastpage :
684
Abstract :
A method for depositing ferroelectric thin layers of PZT 53/47 and 45/55 on platinized silicon is described. Results of preliminary investigations into the nature of the precursors are presented and the effects on the reproducibility of solutions in processing are discussed. Comparisons of the microstructures of thin layers prepared from the two compositions are given and differences in polarization reversal hysteresis measurements are discussed in relation to them
Keywords :
dielectric hysteresis; ferroelectric thin films; lead compounds; sol-gel processing; PZT thin layers; PbZrO3TiO3; ferroelectric; microstructures; polarization reversal hysteresis; precursors; sol-gel processing; Absorption; Ceramics; Chemical compounds; Fabrication; Fires; Lead; Nuclear magnetic resonance; Solvents; Titanium compounds; Zirconium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on
Conference_Location :
Urbana-Champaign, IL
Print_ISBN :
0-7803-0190-0
Type :
conf
DOI :
10.1109/ISAF.1990.200346
Filename :
200346
Link To Document :
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