DocumentCode
3037622
Title
An investigation into the factors affecting the sol-gel processing of PZT thin layers
Author
Lakeman, Charles D E ; Campion, Jean-Florent ; Suchicital, Carlos T A ; Payne, David A.
Author_Institution
Illinois Univ., Urbana, IL, USA
fYear
1990
fDate
6-8 Jun 1990
Firstpage
681
Lastpage
684
Abstract
A method for depositing ferroelectric thin layers of PZT 53/47 and 45/55 on platinized silicon is described. Results of preliminary investigations into the nature of the precursors are presented and the effects on the reproducibility of solutions in processing are discussed. Comparisons of the microstructures of thin layers prepared from the two compositions are given and differences in polarization reversal hysteresis measurements are discussed in relation to them
Keywords
dielectric hysteresis; ferroelectric thin films; lead compounds; sol-gel processing; PZT thin layers; PbZrO3TiO3; ferroelectric; microstructures; polarization reversal hysteresis; precursors; sol-gel processing; Absorption; Ceramics; Chemical compounds; Fabrication; Fires; Lead; Nuclear magnetic resonance; Solvents; Titanium compounds; Zirconium;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on
Conference_Location
Urbana-Champaign, IL
Print_ISBN
0-7803-0190-0
Type
conf
DOI
10.1109/ISAF.1990.200346
Filename
200346
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