Title :
Numerical simulation of single-lithography nanoelectronic complementary bipolar circuits
Author :
Bubennikov, Alexander N. ; Zykov, Andrey V.
Author_Institution :
Moscow Inst. of Phys. & Technol., Russia
Abstract :
This paper presents numerical 2D device-circuit simulation of nanoelectronic complementary bipolar field-effect (CBFE) circuits with potential for an ultra-high degree of integration for future ULSI. Minimum-topologic single-lithography symmetrical transistor structures (STS) with undoped or lightly-doped bases in the nanometer regime possessing good switching and amplifying properties provide for sub-0.4 V CBFE circuits in the ultra-low-power regime with high intrinsic speed and acceptable drivability
Keywords :
BIMOS integrated circuits; ULSI; circuit simulation; lithography; nanotechnology; network topology; numerical analysis; 0.4 V; CBFE circuits; ULSI; drivability; integration level; intrinsic speed; nanoelectronic CBFE circuits; nanoelectronic complementary bipolar field-effect circuits; numerical 2D device-circuit simulation; numerical simulation; single-lithography nanoelectronic complementary bipolar circuits; ultra-low-power regime; CMOS technology; Circuit simulation; Computational modeling; Computer simulation; Inverters; Nanoscale devices; Numerical simulation; Sociotechnical systems; Ultra large scale integration; Voltage;
Conference_Titel :
Microelectronics, 2000. ICM 2000. Proceedings of the 12th International Conference on
Conference_Location :
Tehran
Print_ISBN :
964-360-057-2
DOI :
10.1109/ICM.2000.916436
