Filamentary-switching model in RRAM for time, energy and scaling projections

The resistive switching memory (RRAM) is considered promising for ultra-high-density storage below the 10 nm node. To assess RRAM feasibility, the reduction of switching time/energy and bit size should be demonstrated. This work addresses the physical modeling of filamentary switching in bipolar RRAM. The model describes set/reset transitions in terms of field- and temperature-activated growth/dissolution of a conductive filament (CF), accounting for the voltage-controlled set-transition, for overshoot effects and for the time-voltage dilemma in bipolar RRAMs. The reduction of the switching time and energy by control of the CF size is finally discussed.