DocumentCode
3037839
Title
Analysis of satellite defects formed in photolithograph process by TOF-SIMS and XPS
Author
Lei Zhu ; Teo, H.W. ; Hua, Y.N. ; Loh, H.L. ; Leong, C.C. ; Kam, C.H. ; Zhao, Si Ping ; Redkar, S. ; Gui, D. ; Sheng, Y.Q. ; Xing, Z.X.
Author_Institution
QRA-FA Dept., GLOBALFOUNDRIES Singapore Pte Ltd., Singapore, Singapore
fYear
2013
fDate
15-19 July 2013
Firstpage
293
Lastpage
295
Abstract
Satellite defects are found on wafer surface after development of photo-resist in photolithograph process. We present advanced TOF-SIMS and XPS analysis together with the process investigation to reveal the formation mechanism of the defects.
Keywords
X-ray photoelectron spectra; integrated circuit reliability; photoresists; secondary ion mass spectroscopy; TOF-SIMS; XPS analysis; defect formation mechanism; photolithograph process; photoresist; satellite defects; wafer surface; Failure analysis; Integrated circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location
Suzhou
ISSN
1946-1542
Print_ISBN
978-1-4799-1241-4
Type
conf
DOI
10.1109/IPFA.2013.6599170
Filename
6599170
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