DocumentCode :
3037876
Title :
Ferroelectric thin-film connections in integrated circuit neural networks
Author :
Clark, L.T. ; Dey, S.K. ; Grondin, R.O.
Author_Institution :
Center for Solid-State Electron. Res., Arizona State Univ., Tempe, AZ, USA
fYear :
1990
fDate :
6-8 Jun 1990
Firstpage :
730
Lastpage :
732
Abstract :
The application of ferroelectric thin-film capacitors as connection element synapses in artificial neural network integrated circuits is described. A continuous-valued synapse (analog memory) where the synaptic efficacy is controlled by the polarization of a ferroelectric capacitor element is then described. This analog synapse utilized a non-destructive readout and required very infrequent refresh. A ferroelectric capacitor circuit model added to the SPICE circuit simulation program is discussed
Keywords :
SPICE; analogue storage; dielectric polarisation; digital simulation; ferroelectric devices; ferroelectric storage; ferroelectric thin films; neural chips; nondestructive readout; thin film capacitors; SPICE circuit simulation program; analog memory; application; artificial neural network integrated circuits; circuit model; connection element synapses; continuous-valued synapse; ferroelectric capacitor element; ferroelectric thin-film capacitors; nondestructive readout; polarization; synaptic efficacy; Analog memory; Artificial neural networks; Capacitors; Ferroelectric materials; Intelligent networks; Neural networks; Neurons; Resistors; Thin film circuits; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on
Conference_Location :
Urbana-Champaign, IL
Print_ISBN :
0-7803-0190-0
Type :
conf
DOI :
10.1109/ISAF.1990.200360
Filename :
200360
Link To Document :
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