Superior NBTI reliability of SiGe channel pMOSFETs: Replacement gate, FinFETs, and impact of Body Bias

Author

Franco, J. ; Kaczer, B. ; Eneman, G. ; Roussel, Ph J. ; Grasser, T. ; Mitard, J. ; Ragnarsson, L. -Å ; Cho, M. ; Witters, L. ; Chiarella, T. ; Togo, M. ; Wang, W.-E. ; Hikavyy, A. ; Loo, R. ; Horiguchi, N. ; Groeseneken, G.

Author_Institution

ESAT Dept., Katholieke Univ. Leuven, Leuven, Belgium

fYear

2011

fDate

5-7 Dec. 2011

Abstract

In this paper we demonstrate superior NBTI reliability of SiGe pFETs with ultra-thin EOT in a Replacement Metal Gate (RMG) process flow, and in a SiGe channel bulk pFinFET architecture. Moreover, we investigate the Forward Body Bias (FBB) technique showing that it can very efficiently improve the SiGe device I_ON without compromising the NBTI reliability, or vice versa further improve the device reliability without compromising the ION. Based on the insights provided by the Body Bias experiments, we propose a model for the superior SiGe NBTI reliability which can explain all the experimental observations.

Keywords

Ge-Si alloys; MOSFET; semiconductor device reliability; NBTI reliability; SiGe; channel bulk pFinFET architecture; channel pMOSFET; device reliability improvement; forward body bias technique; negative bias temperature instability; replacement metal gate process flow; ultra-thin EOT; Logic gates; Metals; Performance evaluation; Reliability; Silicon; Silicon germanium; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2011 IEEE International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

978-1-4577-0506-9

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2011.6131580

Filename

6131580