Superior NBTI reliability of SiGe channel pMOSFETs: Replacement gate, FinFETs, and impact of Body Bias

In this paper we demonstrate superior NBTI reliability of SiGe pFETs with ultra-thin EOT in a Replacement Metal Gate (RMG) process flow, and in a SiGe channel bulk pFinFET architecture. Moreover, we investigate the Forward Body Bias (FBB) technique showing that it can very efficiently improve the SiGe device I_ON without compromising the NBTI reliability, or vice versa further improve the device reliability without compromising the ION. Based on the insights provided by the Body Bias experiments, we propose a model for the superior SiGe NBTI reliability which can explain all the experimental observations.