Title :
Failure rate calculation for NMOS devices under multiple failure mechanisms
Author :
Zhenwei Zhou ; Xin Liu ; Qian Shi ; Yunfei En ; Xiaohan Wang
Author_Institution :
Sci. & Technol. on Reliability Phys. & Applic. of Electron. Component Lab., Guangzhou, China
Abstract :
The failure rate for NMOS devices is modelled by sum-of-failure-rate, i.e., the one for HCI mechanism and the one for TDDB failure mechanism. The least squares method is used to estimate the unknown parameters in HCI failure rate model and TDDB failure rate model, respectively. The hypothesis tests show that the regression model for HCI (TDDB) has good fitness and high significance. These results are verified by a numerical example.
Keywords :
MOSFET; electric breakdown; failure analysis; hot carriers; least squares approximations; regression analysis; semiconductor device models; HCI failure rate model; HCI mechanism; NMOS devices; TDDB failure mechanism; TDDB failure rate model; failure rate calculation; hypothesis test; least square method; multiple-failure mechanism; regression model; sum-of-failure-rate; Reliability;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599182
