Author :
Srivastava, P. ; Oprins, H. ; Van Hove, M. ; Das, J. ; Malinowski, P.E. ; Bakeroot, B. ; Marcon, D. ; Visalli, D. ; Kang, X. ; Lenci, S. ; Geens, K. ; Viaene, J. ; Cheng, K. ; Leys, M. ; De Wolf, I. ; Decoutere, S. ; Mertens, R.P. ; Borghs, G.
Abstract :
We report on the first measurement results to obtain over 2 kV breakdown voltage (VBD) of GaN-DHFETs on Si substrates by etching a Si Trench Around Drain contacts (STAD). Similar devices without trenches show VBD of only 650 V. DHFETs fabricated with STAD technology show excellent thermal performance confirmed by electrical measurements and finite element thermal simulations. We observe lower buffer leakage at high temperature (100°C) after STAD compared to devices with Si substrate, enabling high temperature device operation.
Keywords :
III-V semiconductors; electric breakdown; elemental semiconductors; finite element analysis; gallium compounds; high electron mobility transistors; silicon; wide band gap semiconductors; DHFET; STAD contact technology; Si; Si trench around drain contact technology; Si-GaN; boosting power performance; breakdown voltage; electrical measurement; finite element thermal simulation; high temperature device operation; lower buffer leakage; temperature 100 degC; thermal performance; voltage 650 V; Aluminum gallium nitride; Etching; Gallium nitride; Logic gates; Performance evaluation; Silicon; Substrates;
