Title :
High Performance pMEMS™ oscillators - The next generation frequency references
Author :
Bhugra, Harmeet ; Wang, Ye ; Pan, Wanling ; Lei, Dino ; Lee, Seungba
Author_Institution :
Integrated Device Technol., Inc., San Jose, CA, USA
Abstract :
We report in this paper piezoelectrically transduced pMEMS™ resonators developed at IDT for next generation frequency reference applications. Such resonators consist of a piezoelectric material (AlN) on a single-crystal silicon layer substrate. These resonators typically demonstrate a quality factor greater than 5000 operating at 108 MHz and insertion loss close to 10dB. These plastic QFN packaged pMEMS™ oscillators are immune to shock and vibration of 1500G and 20G, respectively, and have shown excellent long term frequency stability at both 25°C and 125 °C. Due to high quality factor and low motional impedance, oscillators based on pMEMS™ resonators can deliver low phase jitter of <;1.0ps measured for 12kHz to 20MHz bandwidth.
Keywords :
III-V semiconductors; VHF oscillators; aluminium compounds; frequency stability; micromechanical resonators; piezoelectric materials; piezoelectric transducers; plastic packaging; wide band gap semiconductors; AlN; Si; bandwidth 12 kHz to 20 MHz; frequency 108 MHz; insertion loss; long term frequency stability; low phase jitter; motional impedance; next generation frequency reference application; piezoelectric material; piezoelectrically transduced pMEMS resonator; plastic QFN packaged pMEMS oscillator; quality factor; single-crystal silicon layer substrate; temperature 125 degC; temperature 25 degC; Crystals; Electric shock; Oscillators; Plastics; Resonant frequency; Silicon; Vibrations;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131588
