Title :
Study of FIB milling induced damage and contamination on ex-situ lift-out TEM specimen and methodology to reduce the artifacts
Author :
Liew Kaeng Nan ; Lee Meng Lung
Author_Institution :
United Microelectron. Corp. (Singapore Branch), Ltd., Singapore, Singapore
Abstract :
Conventional FIB ex-situ lift-out is the most common technique for TEM specimen preparation. However, the FIB milling induced artifacts limit the TEM image quality. By a novel double cross-sectional lamellae preparation, the sidewall amorphous layers were studied. It was noted excess damage layer and additional redeposition layer were observed on different side of TEM specimen, which induced by ion beam irradiation and redeposition of sputtered material respectively when cutting the TEM specimen free from trench at 0 degree stage tilt. By the bottom cut-first FIB method, the damage layer and redeposition layer were therefore reduced. Real TEM cases have shown that the method offers better TEM image quality compared to that of the samples prepared by normal FIB procedures, while maintaining high TEM sample preparation throughput.
Keywords :
contamination; cutting; focused ion beam technology; ion beam effects; milling; sputtering; transmission electron microscopy; FIB ex-situ lift-out; FIB milling induced artifacts; FIB milling induced damage; TEM image quality; TEM sample preparation throughput; TEM specimen preparation; bottom cut-first FIB method; contamination; cutting; damage layer; double cross-sectional lamellae preparation; ex-situ lift-out TEM specimen; ion beam irradiation; ion beam redeposition; normal FIB procedures; real TEM cases; redeposition layer; sidewall amorphous layers; sputtered material; stage tilt; Ion beams; Milling; Radiation effects; Silicon; Surface treatment; Throughput;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599190