DocumentCode
3038241
Title
Gallium nitride-on-silicon micromechanical overtone resonators and filters
Author
Ansari, Azadeh ; Gokhale, Vikrant J. ; Thakar, Vikram A. ; Roberts, John ; Rais-Zadeh, Mina
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
fYear
2011
fDate
5-7 Dec. 2011
Abstract
In this paper, for the first time, we report on high-performance GaN-on-silicon micromechanical resonators and filters. A GaN-on-silicon resonator is reported which exhibits a quality factor of 1850 at 802.5 MHz, resulting in an f×Q value twice the highest reported for GaN-based resonators to date. The effective coupling coefficient for the GaN resonator is extracted to be 1.7%, which is among the best reported in the literature.
Keywords
III-V semiconductors; Q-factor; filters; gallium compounds; micromechanical resonators; silicon; wide band gap semiconductors; GaN; Si; coupling coefficient; frequency 802.5 MHz; gallium nitride-on-silicon; micromechanical overtone filters; micromechanical overtone resonators; quality factor; Electrodes; Film bulk acoustic resonators; Gallium nitride; Resonant frequency; Resonator filters; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
978-1-4577-0506-9
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2011.6131590
Filename
6131590
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