Title :
Electrical fault localization and Scanning Capacitance Microscopy (SCM) analysis methodology on high RDSON failure of smart power technology IC device
Author :
Ang Chung Keow ; Bin Hashim, Ismail ; Sern, Lee Nean
Author_Institution :
Infineon Technol. (Kulim) Sdn Bhd, Kulim, Malaysia
Abstract :
The increasing complexity of integrated circuits has made fault localization becoming more difficult. This paper outlines the electrical fault localization process flow with circuit studies and micro-probing measurement for further single device localization. Subsequently, physical defect of abnormal N-type MOSFET doping profile is identified thru Scanning Capacitance Microscopy analysis.
Keywords :
capacitance measurement; failure analysis; fault location; integrated circuit design; integrated circuit reliability; integrated circuit testing; power integrated circuits; scanning probe microscopy; SCM analysis methodology; abnormal N-type MOSFET doping profile; electrical fault localization process flow; high RDSON failure; microprobing measurement; scanning capacitance microscopy; smart power technology IC device; DVD; Decision support systems; Failure analysis; Integrated circuits;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599193
