Title :
High device yield carbon nanotube NFETs for high-performance logic applications
Author :
Shahrjerdi, Davood ; Franklin, Aaron D. ; Oida, Satoshi ; Tulevski, George S. ; Han, Shu-Jen ; Hannon, James B. ; Haensch, Wilfried
Author_Institution :
T.J. Watson Res. Center, IBM Res., Yorktown Heights, NY, USA
Abstract :
We present the first analysis of device yield and material composition for several low work-function metal contacts to carbon nanotubes (CNT), including the first demonstration of high-performance n-channel field-effect transistors (NFET) from erbium (Er) and lanthanum (La). Our results indicate drastic improvement in NFET yield by appropriate metal selection and optimization of deposition conditions.
Keywords :
carbon nanotube field effect transistors; optimisation; work function; C; erbium; high device yield carbon nanotube NFET; high-performance logic application; high-performance n-channel field-effect transistor; lanthanum; material composition; metal selection; optimization; work-function metal contact; Carbon nanotubes; Erbium; Hysteresis; Materials; Oxidation; Performance evaluation;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131596
