DocumentCode
3038424
Title
Application of Atomic Force Microscopy in IC/discrete failure analysis
Author
Poo Khai Yee ; Lim Saw Sing
Author_Institution
Infineon Technol. (Kulim) Sdn Bhd, Kulim, Malaysia
fYear
2013
fDate
15-19 July 2013
Firstpage
449
Lastpage
454
Abstract
Application of Atomic Force Microscopy (AFM) to characterize surface topography in nanometer scale is demonstrated qualitatively and quantitatively in few case studies. Various types of sample material had been measured successfully such as submicron oxide pin-hole, polyimide roughness, oxide growth on copper lead frame, damaged silicon lattice after implantation and soft adhesive UV tape.
Keywords
atomic force microscopy; failure analysis; integrated circuit reliability; nanoelectronics; surface topography; AFM; IC-discrete failure analysis; atomic force microscopy; copper lead frame; damaged silicon lattice; implantation; nanometer scale; oxide growth; polyimide roughness; soft adhesive UV tape; submicron oxide pin-hole; surface topography; Decision support systems; Failure analysis; Integrated circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location
Suzhou
ISSN
1946-1542
Print_ISBN
978-1-4799-1241-4
Type
conf
DOI
10.1109/IPFA.2013.6599198
Filename
6599198
Link To Document