Title :
Application of Atomic Force Microscopy in IC/discrete failure analysis
Author :
Poo Khai Yee ; Lim Saw Sing
Author_Institution :
Infineon Technol. (Kulim) Sdn Bhd, Kulim, Malaysia
Abstract :
Application of Atomic Force Microscopy (AFM) to characterize surface topography in nanometer scale is demonstrated qualitatively and quantitatively in few case studies. Various types of sample material had been measured successfully such as submicron oxide pin-hole, polyimide roughness, oxide growth on copper lead frame, damaged silicon lattice after implantation and soft adhesive UV tape.
Keywords :
atomic force microscopy; failure analysis; integrated circuit reliability; nanoelectronics; surface topography; AFM; IC-discrete failure analysis; atomic force microscopy; copper lead frame; damaged silicon lattice; implantation; nanometer scale; oxide growth; polyimide roughness; soft adhesive UV tape; submicron oxide pin-hole; surface topography; Decision support systems; Failure analysis; Integrated circuits;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599198
