Title :
Rapid thermal chemical vapor deposition of in-situ nitrogen-doped poly-silicon for dual gate CMOS
Author :
Sun, S.C. ; Wang, L.S. ; Yeh, F.L. ; Chen, C.H.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A novel gate structure with excellent electrical properties and reliability has been fabricated by in-situ rapid thermal multiprocessing. Gate oxide was grown first by low pressure rapid thermal oxidation in N/sub 2/O, followed by sequential rapid thermal chemical vapor deposition (RTCVD) of an ultrathin layer (6 nm) of nitrogen-doped polysilicon and then undoped polysilicon. Results show the suppression of boron penetration and high device reliability.
Keywords :
MOSFET; chemical vapour deposition; elemental semiconductors; nitrogen; oxidation; rapid thermal processing; semiconductor device reliability; semiconductor doping; semiconductor growth; semiconductor technology; silicon; Si:N; boron penetration; device reliability; dual gate CMOS; electrical properties; gate oxide; in-situ nitrogen-doped poly-silicon; low pressure rapid thermal oxidation; rapid thermal chemical vapor deposition; Boron; Capacitance-voltage characteristics; Chemical vapor deposition; Doping; Laboratories; MOS capacitors; MOSFET circuits; Nitrogen; Sun; Threshold voltage;
Conference_Titel :
VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
0-7803-2602-4
DOI :
10.1109/VLSIT.1995.520887
