• DocumentCode
    3038502
  • Title

    Record high RF performance for epitaxial graphene transistors

  • Author

    Wu, Y.Q. ; Farmer, D.B. ; Valdes-Garcia, A. ; Zhu, W.J. ; Jenkins, K.A. ; Dimitrakopoulos, C. ; Avouris, Ph ; Lin, Y.-M.

  • Author_Institution
    IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    2011
  • fDate
    5-7 Dec. 2011
  • Abstract
    By optimizing of the gate dielectrics and device dimensions, we achieve a record high output current and transconductance of 5 mA/μm and 2 mS/μm in epitaxial graphene FETs. A cut-off frequency of 280 GHz is achieved for a 40-nm graphene FET, the highest so far on any synthesized graphene. Also, highest voltage gain of 10 dB has been achieved, with an fmax/fT ratio larger than 1 demonstrated consistently on different devices. For the first time, forward power gain |S21|>;1 delivered into a 50-Ω load is demonstrated.
  • Keywords
    field effect transistors; graphene; C; epitaxial graphene FET; forward power gain; frequency 280 GHz; gain 10 dB; gate dielectric; high RF performance; resistance 50 ohm; size 40 nm; transconductance; Dielectrics; Epitaxial growth; FETs; Gain; Logic gates; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2011 IEEE International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4577-0506-9
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2011.6131601
  • Filename
    6131601
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3038502