DocumentCode :
3038538
Title :
Impact of non-quasi-static effects on the high frequency small-signal behaviour of MOSFETs
Author :
Vandamme, E.P. ; Badenes, G.
Author_Institution :
IMEC, Leuven, Belgium
fYear :
2000
fDate :
2000
Firstpage :
371
Lastpage :
374
Abstract :
In this paper, we investigate the impact of nonquasi-static (NQS) effects on the small-signal RF behaviour of MOSFETs. We observed that the transistor power gain GTmax is largely overestimated in the quasi-static model, whereas it is accurately predicted using a second order NQS model. Furthermore, we investigated the impact of channel width scaling on the transistor y-parameters for the second order NQS model. Accurate modelling results are obtained for MOSFETs with small channel widths. However, experimental results indicate that the effective gate resistance, stemming from the distributed nature of the MOS gate, tends to be lower than Rgate=WR/(3L) at frequencies close to or larger than f=1/(R(□)CoxW2). This was observed for transistors with a 25 μm channel width
Keywords :
MOSFET; electric resistance; microwave field effect transistors; semiconductor device models; MOSFET channel width; MOSFETs; channel width; channel width scaling; distributed MOS gate; effective gate resistance; high frequency small-signal behaviour; modelling; nonquasi-static effects; quasi-static model; second order NQS model; small-signal RF behaviour; transistor power gain; transistor y-parameters; Aging; CMOS technology; Capacitance; Equivalent circuits; Length measurement; MOSFETs; Predictive models; Radio frequency; Semiconductor device modeling; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 2000. ICM 2000. Proceedings of the 12th International Conference on
Conference_Location :
Tehran
Print_ISBN :
964-360-057-2
Type :
conf
DOI :
10.1109/ICM.2000.916480
Filename :
916480
Link To Document :
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