Racetrack Memory: A high-performance, low-cost, non-volatile memory based on magnetic domain walls

Author

Thomas, Luc ; Yang, See-Hun ; Ryu, Kwang-Su ; Hughes, Brian ; Rettner, Charles ; Wang, Ding-Shuo ; Tsai, Ching-Hsiang ; Shen, Kuei-Hung ; Parkin, Stuart S.P.

Author_Institution

IBM Almaden Res. Center, San Jose, CA, USA

fYear

2011

fDate

5-7 Dec. 2011

Abstract

We have demonstrated the key components of the Racetrack Memory. In particular, we have shown that a series of DWs can be moved at high speed along magnetic nanowires by using nanosecond long current pulses for both in-plane and perpendicularly magnetized racetracks. The spacing between DWs has been reduced significantly by using a perpendicularly magnetized RT. Higher storage densities can be achieved by optimizing the materials of the RT (Fig.11) and by scaling the racetrack width.

Keywords

MRAM devices; magnetic domain walls; nanowires; RT material; in-plane magnetized racetrack; magnetic domain wall; magnetic nanowire; nanosecond long current pulse; nonvolatile memory device; perpendicularly magnetized racetrack; racetrack memory; racetrack width scaling; storage density; Magnetic domain walls; Magnetic domains; Magnetic tunneling; Magnetization; Materials; Nanowires; Resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2011 IEEE International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

978-1-4577-0506-9

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2011.6131603

Filename

6131603