Title :
Racetrack Memory: A high-performance, low-cost, non-volatile memory based on magnetic domain walls
Author :
Thomas, Luc ; Yang, See-Hun ; Ryu, Kwang-Su ; Hughes, Brian ; Rettner, Charles ; Wang, Ding-Shuo ; Tsai, Ching-Hsiang ; Shen, Kuei-Hung ; Parkin, Stuart S.P.
Author_Institution :
IBM Almaden Res. Center, San Jose, CA, USA
Abstract :
We have demonstrated the key components of the Racetrack Memory. In particular, we have shown that a series of DWs can be moved at high speed along magnetic nanowires by using nanosecond long current pulses for both in-plane and perpendicularly magnetized racetracks. The spacing between DWs has been reduced significantly by using a perpendicularly magnetized RT. Higher storage densities can be achieved by optimizing the materials of the RT (Fig.11) and by scaling the racetrack width.
Keywords :
MRAM devices; magnetic domain walls; nanowires; RT material; in-plane magnetized racetrack; magnetic domain wall; magnetic nanowire; nanosecond long current pulse; nonvolatile memory device; perpendicularly magnetized racetrack; racetrack memory; racetrack width scaling; storage density; Magnetic domain walls; Magnetic domains; Magnetic tunneling; Magnetization; Materials; Nanowires; Resistance;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131603