Title :
Tutorial: characterizing SDRAMs
Author_Institution :
White Oak Semicond., Sandston, VI
Abstract :
This paper presents characterization methods for an SDRAM in a manufacturing environment. Contact tests, dc tests, basic functional tests, signal margin tests and retention characterization are shown. Measurement of the cell signal is used as an example for pico probing. Special test modes for SDRAMs which can be used to aid characterization and failure analysis (FA) are discussed
Keywords :
DRAM chips; failure analysis; integrated circuit reliability; integrated circuit testing; production testing; SDRAMs; basic functional tests; characterization methods; contact tests; dc tests; failure analysis; manufacturing environment; pico probing; retention characterization; signal margin tests; test modes; Circuit testing; Failure analysis; Logic devices; Manufacturing; SDRAM; Semiconductor device measurement; Temperature; Timing; Tutorial; Voltage;
Conference_Titel :
Memory Technology, Design and Testing, 1999. Records of the 1999 IEEE International Workshop on
Conference_Location :
San Jose, CA
Print_ISBN :
0-7695-0259-8
DOI :
10.1109/MTDT.1999.782685
