A failure analysis technique using the Nano Electrostatic field Probe Sensor (NEPS)

Author

Ito, Satoshi ; Matsumoto, Tad

Author_Institution

Technol. Grop Konaka Electron., Ogaki, Japan

fYear

2013

fDate

15-19 July 2013

Firstpage

493

Lastpage

496

Abstract

The laser NEPS (Nano Electrostatic field Probe Sensor) method is one of the techniques to estimate a failing region by imaging the change of the carrier signal that occurs by irradiating the laser beam light to LSI under the non-contact and non-bias source analysis environment. In this announcement, the principle of the NEPS method is explained using a capacitive coupling model, and the laser irradiation position and the most suitable analysis condition of NEPS detecting position is clarified. In addition, the I/O terminal leak defect of the chip LSI products is analyzed by means of the NEPS method, and the result of detected abnormalities by the via contact and the meltdown of the silicon basal plate interface will be shown.

Keywords

electric sensing devices; electrostatic devices; failure analysis; nanosensors; radiation hardening (electronics); I/O terminal leak defect; LSI; capacitive coupling model; carrier signal; failure analysis technique; laser NEPS; laser beam light; laser irradiation position; nanoelectrostatic field probe sensor; nonbias source analysis; noncontact source analysis; silicon basal plate interface; Electrodes; Failure analysis; Large scale integration; Laser beams; Radiation effects; Semiconductor lasers; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the

Conference_Location

Suzhou

ISSN

1946-1542

Print_ISBN

978-1-4799-1241-4

Type

conf

DOI

10.1109/IPFA.2013.6599208

Filename

6599208