DocumentCode :
3038645
Title :
A fast test to generate flash memory threshold voltage distribution map
Author :
Khubchandani, Raju
Author_Institution :
MOSAID Technol. Inc., Ottawa, Ont., Canada
fYear :
1999
fDate :
1999
Firstpage :
78
Lastpage :
82
Abstract :
This paper describes a method to determine threshold voltage (V th) distribution as a multi-colored bitmap of the die. That is, a visual indication of relative threshold voltages on different areas of the die is provided. The spatial distribution of threshold voltage is felt to be more informative than conventional techniques which provide results as a bell-curve Gauss distribution plot of threshold voltage versus number of cells. The time required for test execution (including data gathering) is considerably less than the time taken by conventional methods
Keywords :
flash memories; integrated circuit testing; integrated memory circuits; voltage distribution; fast test; flash memory testing; multi-colored bitmap; relative threshold voltages; spatial distribution; threshold voltage distribution map; visual indication; Area measurement; Circuit testing; Condition monitoring; Electronic switching systems; Flash memory; Identity-based encryption; Nonvolatile memory; Product development; Temperature; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Memory Technology, Design and Testing, 1999. Records of the 1999 IEEE International Workshop on
Conference_Location :
San Jose, CA
ISSN :
1087-4852
Print_ISBN :
0-7695-0259-8
Type :
conf
DOI :
10.1109/MTDT.1999.782687
Filename :
782687
Link To Document :
بازگشت