A high-performance, high-density 28nm eDRAM technology with high-K/metal-gate

Author

Huang, K.C. ; Ting, Y.W. ; Chang, C.Y. ; Tu, K.C. ; Tzeng, K.C. ; Chu, H.C. ; Pai, C.Y. ; Katoch, A. ; Kuo, W.H. ; Chen, K.W. ; Hsieh, T.H. ; Tsai, C.Y. ; Chiang, W.C. ; Lee, H.F. ; Achyuthan, A. ; Chen, C.Y. ; Chin, H.W. ; Wang, M.J. ; Wang, C.J. ; Tsai,

Author_Institution

Taiwan Semicond. Manuf. Co., Ltd., Hsinchu, Taiwan

fYear

2011

fDate

5-7 Dec. 2011

Abstract

This paper presents industry´s smallest 0.035 um² high performance embedded DRAM cell with cylinder-type Metal-Insulator-Metal (MIM) capacitor and integrated into 28 nm High-K Metal Gate (HKMG) logic technology. This eDRAM memory features an HKMG CMOS compatible (low-thermal low-charging process) high-K MIM capacitor with extreme low leakage (<;0.1fA/cell). Access transistor with HKMG shows excellent driving capability (>;50uA/cell) with <;1fA/cell leakage in 28 nm cell and <;3fA/cell in 20 nm cell (0.021um²). We demonstrate first functional silicon success of 28nm eDRAM macro. 600/550 MHz operating frequency is achieved at typical/worse cases.

Keywords

CMOS logic circuits; CMOS memory circuits; DRAM chips; MIM devices; capacitors; high-k dielectric thin films; HKMG CMOS; HKMG logic technology; access transistor; cylinder-type MIM capacitor; cylinder-type metal-insulator-metal capacitor; driving capability; eDRAM macro; embedded DRAM cell; frequency 500 MHz; frequency 600 MHz; high-K-metal-gate logic technology; high-density eDRAM technology; high-performance eDRAM technology; low-thermal low-charging process; size 28 nm; CMOS integrated circuits; Capacitance; Capacitors; High K dielectric materials; Logic gates; MIM capacitors; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2011 IEEE International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

978-1-4577-0506-9

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2011.6131608

Filename

6131608