A ferroelectric capacitor over bit-line (F-COB) cell for high density nonvolatile ferroelectric memories

Author

Tanabe, N. ; Matsuki, T. ; Saitoh, S. ; Takeuchi, T. ; Kobayashi, S. ; Nakajima, T. ; Maejima, Y. ; Hayashi, Y. ; Amanuma, K. ; Hase, T. ; Miyasaka, Y. ; Kunio, T.

Author_Institution

Microelectron. Res. Labs., NEC Corp., Sagamihara, Japan

fYear

1995

fDate

6-8 June 1995

Firstpage

123

Lastpage

124

Abstract

A ferroelectric capacitor over bit-line (F-COB) cell is proposed for high density nonvolatile ferroelectric memories (NVFRAMs). This memory cell with 0.7 /spl mu/m design rule was successfully fabricated using a newly-developed fabrication process, combining CMP and MOCVD techniques. Good ferroelectric properties of storage capacitor, having a remanent polarization of 15 /spl mu/C/cm/sup 2/ and leakage current density of 10/sup -6/ A/cm/sup 2/, have been realized without degradation in CMOS characteristics.

Keywords

cellular arrays; chemical vapour deposition; ferroelectric capacitors; ferroelectric storage; leakage currents; polishing; random-access storage; 0.7 micron; CMP technique; MOCVD technique; design rule; fabrication process; ferroelectric capacitor over bit-line cell; leakage current density; nonvolatile ferroelectric memories; remanent polarization; storage capacitor; Capacitors; Degradation; Electrodes; Fabrication; Ferroelectric films; Ferroelectric materials; Laboratories; Large scale integration; Nonvolatile memory; Plugs;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

0-7803-2602-4

Type

conf

DOI

10.1109/VLSIT.1995.520888

Filename

520888