• DocumentCode
    3038740
  • Title

    A 277 GHz fmax transferred-substrate heterojunction bipolar transistor

  • Author

    Agarwal, B. ; Mensa, D. ; Pullela, R. ; Lee, Q. ; Bhattacharya, U. ; Samoska, Lorene ; Guthrie, J. ; Rodwell, M.J.W.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • fYear
    1997
  • fDate
    11-15 May 1997
  • Firstpage
    633
  • Lastpage
    636
  • Abstract
    We report a AlInAs/GaInAs transferred-substrate Schottky-collector heterojunction bipolar transistor. A device with aligned 0.7 μm emitter and 1.6 μm collector stripes has extrapolated 277 GHz fmax and 127 GHz fτ respectively
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; 0.7 mum; 1.6 mum; 127 GHz; 277 GHz; AlInAs-GaInAs; AlInAs/GaInAs; DC common-emitter characteristics; InP; aligned collector stripes; aligned emitter stripes; current gain cut-off frequency; power gain cut-off frequency; transferred-substrate HBT; transferred-substrate Schottky-collector heterojunction bipolar transistor; Analog-digital conversion; Bipolar transistors; Cutoff frequency; Dry etching; Epitaxial layers; Fabrication; Gold; Heterojunction bipolar transistors; Substrates; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1997., International Conference on
  • Conference_Location
    Cape Cod, MA
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-3898-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1997.600250
  • Filename
    600250
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3038740