Development, characterization and integration of a novel boron nitride process for application as a Cu diffusion barrier

Author

Yi Chen ; Spuller, M. ; Balseanu, M. ; Zhenjiang Cui ; Naik, M. ; Li-Qun Xia

Author_Institution

Appl. Mater., Inc., Santa Clara, CA, USA

fYear

2010

fDate

6-9 June 2010

Firstpage

1

Lastpage

3

Abstract

The properties of boron nitride (BN) films cyclically-deposited by means of PECVD have been studied. Cyclical deposition is critical to improve the density and reduce the k of the material. When compared to conventional SiCN barriers, this material demonstrates greatly reduced leakage, superior mechanical properties and better etch selectivity. Therefore, BN is a promising candidate as a low k dielectric copper barrier and etch stop.

Keywords

III-V semiconductors; boron compounds; chemical vapour deposition; compressibility; copper; diffusion barriers; etching; low-k dielectric thin films; semiconductor thin films; silicon compounds; wide band gap semiconductors; BN; PECVD; SiCN; boron nitride films; compressive stress; copper diffusion barrier; cyclical deposition; etch selectivity; low-k dielectric film; Boron; Copper; Curing; Dielectric breakdown; Dielectric constant; Dielectric materials; Etching; Mechanical factors; Monitoring; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference (IITC), 2010 International

Conference_Location

Burlingame, CA

Print_ISBN

978-1-4244-7676-3

Type

conf

DOI

10.1109/IITC.2010.5510730

Filename

5510730