Title :
Development, characterization and integration of a novel boron nitride process for application as a Cu diffusion barrier
Author :
Yi Chen ; Spuller, M. ; Balseanu, M. ; Zhenjiang Cui ; Naik, M. ; Li-Qun Xia
Author_Institution :
Appl. Mater., Inc., Santa Clara, CA, USA
Abstract :
The properties of boron nitride (BN) films cyclically-deposited by means of PECVD have been studied. Cyclical deposition is critical to improve the density and reduce the k of the material. When compared to conventional SiCN barriers, this material demonstrates greatly reduced leakage, superior mechanical properties and better etch selectivity. Therefore, BN is a promising candidate as a low k dielectric copper barrier and etch stop.
Keywords :
III-V semiconductors; boron compounds; chemical vapour deposition; compressibility; copper; diffusion barriers; etching; low-k dielectric thin films; semiconductor thin films; silicon compounds; wide band gap semiconductors; BN; PECVD; SiCN; boron nitride films; compressive stress; copper diffusion barrier; cyclical deposition; etch selectivity; low-k dielectric film; Boron; Copper; Curing; Dielectric breakdown; Dielectric constant; Dielectric materials; Etching; Mechanical factors; Monitoring; Tensile stress;
Conference_Titel :
Interconnect Technology Conference (IITC), 2010 International
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4244-7676-3
DOI :
10.1109/IITC.2010.5510730
