• DocumentCode
    3038747
  • Title

    Measuring threshold voltage variability of 10G transistors

  • Author

    Mizutani, Tomoko ; Kumar, Anil ; Hiramoto, Toshiro

  • Author_Institution
    Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2011
  • fDate
    5-7 Dec. 2011
  • Abstract
    Threshold voltage (VTH) variability of 10G (10 billion) transistors is measured using a special device-matrix-array test-element-group (DMA TEG) exclusively for ultra-fast VTH measurements. It is found that VTH variability in nFETs almost follows the normal distribution up to ±6σ, while pFETs have a clear “tail” in low VTH region. The origin of the non-normal distribution is analyzed by measuring transistors fabricated in two different fabs and by 3D device simulation.
  • Keywords
    field effect transistors; voltage measurement; 3D device simulation; DMA TEG; device-matrix-array test-element-group; nFET; nonnormal distribution; pFET; threshold voltage variability; transistors; ultrafast threshold voltage measurements; Current measurement; Gaussian distribution; Semiconductor device measurement; Three dimensional displays; Transistors; Very large scale integration; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2011 IEEE International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4577-0506-9
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2011.6131610
  • Filename
    6131610
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3038747