Title :
A 6 GHz phase-locked loop using AlGaAs/GaAs heterojunction bipolar transistors
Author :
Buchwald, A. ; Martin, K. ; Oki, A. ; Kobayashi, K.
Author_Institution :
Integrated Circuits & Syst. Lab., California Univ., Los Angeles, CA, USA
Abstract :
The authors fabricated in an AlGaAs/GaAs heterojunction bipolar transistor (HBT) process, that can be used as a building block for clock-recovery circuits in high-speed fiber-optic receivers, so that the maximum data rate of fully integrated receivers can be extended from 2.5 Gb/s to 6 Gb/s. A block diagram of the PLL circuit is shown and a micrograph of the chip is presented.<>
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; clocks; gallium arsenide; heterojunction bipolar transistors; optical fibres; optical receivers; phase-locked loops; 6 Gbit/s; AlGaAs-GaAs; PLL circuit; clock-recovery circuits; data rate; fiber-optic receivers; heterojunction bipolar transistors; Analog integrated circuits; Application specific integrated circuits; Bipolar integrated circuits; Electrons; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Microwave devices; Phase locked loops; Voltage-controlled oscillators;
Conference_Titel :
Solid-State Circuits Conference, 1992. Digest of Technical Papers. 39th ISSCC, 1992 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0573-6
DOI :
10.1109/ISSCC.1992.200430
