DocumentCode
3038756
Title
Computing at the Nanoscale
Author
Savage, John E.
Author_Institution
Brown Univ., Providence, RI
fYear
2008
fDate
1-3 Oct. 2008
Firstpage
423
Lastpage
423
Abstract
Summary form only given..Advances have been been made recently in assembling nanoscale devices without using photolithography. This important development, which offers the potential for greatly increasing the density of memory cells and logic gates, introduces a new model of computation and new analytical challenges. In this talk we provide an introduction to this new area. The difficulty of assembling irregularly placed nanoscale devices has caused the research community to focus on the crossbar. All known methods for controlling individual nanowires (NWs) in a crossbar by mesoscale wires (MWs) introduces randomness in the connections. This introduces several questions. First, which methods of controlling NWs with MWs devotes the smallest amount of area for this purpose? Second, how can stochastically assembled chips be configured after assembly? Third, since errors will occur during assembly, how can chips be designed to minimize the effect of such errors? Finally, what computational limitations do stochastically assembled, crossbar-based computers introduce? We will address these and other questions.
Keywords
assembling; nanoelectronics; nanowires; assembling; crossbar-based computers; mesoscale wires; nanoscale devices; nanowires; stochastically assembled chips; Assembly systems; Books; Computational modeling; Computer errors; Computer science; Fault tolerant systems; Lithography; Logic gates; Nanoscale devices; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Defect and Fault Tolerance of VLSI Systems, 2008. DFTVS '08. IEEE International Symposium on
Conference_Location
Boston, MA
ISSN
1550-5774
Print_ISBN
978-0-7695-3365-0
Type
conf
DOI
10.1109/DFT.2008.70
Filename
4641199
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