• DocumentCode
    3038782
  • Title

    Process Variation Aware Cache Leakage Management

  • Author

    Meng, Ke ; Joseph, Russ

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL
  • fYear
    2006
  • fDate
    4-6 Oct. 2006
  • Firstpage
    262
  • Lastpage
    267
  • Abstract
    In a few technology generations, limitations of fabrication processes have made accurate design time power estimates a daunting challenge. Static leakage current which comprises a significant fraction of total power due to large on-chip caches, is exponentially dependent on widely varying physical parameters such as gate length, gate oxide thickness, and dopant ion concentration. In large structures like on-chip caches, this may mean that one portion of a cache may consume an order of magnitude larger static power than equivalently sized regions. Under this climate, egalitarian management of physical resources is clearly untenable. In this paper, we analyze the effects of within-die and die-to-die leakage variation for on-chip caches. We then propose way prioritization, a manufacturing variation aware scheme that minimizes cache leakage energy. Our results show that significant average power reductions are possible without undue hardware complexity or performance compromise
  • Keywords
    cache storage; leakage currents; storage management chips; average power reductions; cache leakage energy; cache leakage management; die-to-die leakage variation; manufacturing variation aware scheme; on-chip caches; process variation; way prioritization; within-die leakage variation; Cache memory; Circuits; Engineering management; Fabrication; Hardware; Manufacturing; Memory management; Permission; Power generation; Resource management; Design; Experimentation; Gated-VDD; Performance; cache management; leakage; low power; process variation; selective cache ways;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Low Power Electronics and Design, 2006. ISLPED'06. Proceedings of the 2006 International Symposium on
  • Conference_Location
    Tegernsee
  • Print_ISBN
    1-59593-462-6
  • Type

    conf

  • DOI
    10.1109/LPE.2006.4271847
  • Filename
    4271847