Conformal deposition of electroless barrier and seed layers in TSV with Au nano particle catalyst

Author

Inoue, F. ; Yokoyama, T. ; Miyake, H. ; Tanaka, S. ; Yamamoto, K. ; Shingubara, S.

Author_Institution

Dept. of Mech. Eng., Kansai Univ., Suita, Japan

fYear

2010

fDate

6-9 June 2010

Firstpage

1

Lastpage

2

Abstract

Low cost and low temperature fabrication process is required for TSV. In this study, we propose a low temperature deposition of barrier and copper seed layers by wet process only using electroless plating. Moreover, we use AuNPs as a catalyst which is densely adsorbed on SiO₂ sidewall of TSV with SAM. We succeeded in conformal deposition of barrier and seed layers, and this method is effective for realizing a low resistance Cu-filled TSV.

Keywords

copper; cryogenics; electroless deposition; gold; nanoparticles; silicon compounds; three-dimensional integrated circuits; Au; Cu; SiO₂; TSV; copper seed layers; electroless barrier conformal deposition; electroless plating; low cost fabrication process; low temperature deposition; low temperature fabrication process; nanoparticle catalyst; wet process; Communications technology; Copper; Costs; Fabrication; Gold; Mechanical engineering; Sputtering; Surface treatment; Temperature; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference (IITC), 2010 International

Conference_Location

Burlingame, CA

Print_ISBN

978-1-4244-7676-3

Type

conf

DOI

10.1109/IITC.2010.5510734

Filename

5510734