• DocumentCode
    3038827
  • Title

    Impact of line edge roughness and linewidth roughness on critical dimension variation

  • Author

    Zhao, Fengxia ; Wang, Qinghai ; Zhang, Linna ; Jiang, Zhuangde

  • Author_Institution
    Sch. of Mech. Eng., Zhengzhou Univ., Zhengzhou, China
  • Volume
    3
  • fYear
    2012
  • fDate
    25-27 May 2012
  • Firstpage
    475
  • Lastpage
    479
  • Abstract
    To investigate the line edge roughness (LER) and linewidth roughness (LWR) impact on critical dimension (CD) variation for gates, three characterization models of LER/LWR are present, the LER/LWR line edges with the self-affine behavior are simulated, and the relationship between the CD variation and the parameters of LER/LWR are found out. The results show that without any other sources of variation, LER/LWR can cause gate line-width variation, and its effect on the CD variation is of first-order.
  • Keywords
    MOSFET; semiconductor device models; CD variation; LER; LWR; critical dimension variation; gate line-width variation; line edge roughness; linewidth roughness; self-affine behavior; Correlation; Educational institutions; Logic gates; Optical surface waves; Optical waveguides; Rough surfaces; Surface roughness; critical dimension variation; line edge roughness (LER); linewidth roughness (LWR); simulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer Science and Automation Engineering (CSAE), 2012 IEEE International Conference on
  • Conference_Location
    Zhangjiajie
  • Print_ISBN
    978-1-4673-0088-9
  • Type

    conf

  • DOI
    10.1109/CSAE.2012.6272996
  • Filename
    6272996
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3038827