Title :
Impact of line edge roughness and linewidth roughness on critical dimension variation
Author :
Zhao, Fengxia ; Wang, Qinghai ; Zhang, Linna ; Jiang, Zhuangde
Author_Institution :
Sch. of Mech. Eng., Zhengzhou Univ., Zhengzhou, China
Abstract :
To investigate the line edge roughness (LER) and linewidth roughness (LWR) impact on critical dimension (CD) variation for gates, three characterization models of LER/LWR are present, the LER/LWR line edges with the self-affine behavior are simulated, and the relationship between the CD variation and the parameters of LER/LWR are found out. The results show that without any other sources of variation, LER/LWR can cause gate line-width variation, and its effect on the CD variation is of first-order.
Keywords :
MOSFET; semiconductor device models; CD variation; LER; LWR; critical dimension variation; gate line-width variation; line edge roughness; linewidth roughness; self-affine behavior; Correlation; Educational institutions; Logic gates; Optical surface waves; Optical waveguides; Rough surfaces; Surface roughness; critical dimension variation; line edge roughness (LER); linewidth roughness (LWR); simulation;
Conference_Titel :
Computer Science and Automation Engineering (CSAE), 2012 IEEE International Conference on
Conference_Location :
Zhangjiajie
Print_ISBN :
978-1-4673-0088-9
DOI :
10.1109/CSAE.2012.6272996
