Title :
NexFET generation 2, new way to power
Author :
Yang, Boyi ; Xu, Shuming ; Korec, Jacek ; Wang, Jun ; Lopez, Ozzie ; Jauregui, David ; Kocon, Christopher ; Herbsommer, Juan ; Molloy, Simon ; Daum, Gary ; Lin, Haian ; Pearce, Charles ; Noquil, Jonathan ; Shen, John
Author_Institution :
Low Voltage Power Stage Unite, Texas Instrum. Inc., Bethlehem, PA, USA
Abstract :
In this paper, an integrated NexFET power module is presented to meet requirements on next-generation, high efficiency and high current density DC-DC converters for computer applications. The new power module uses an innovative stacked-die package technology, implements low Vth power MOSFET in the low-side position, and introduces monolithically integrated components to avoid shoot-through and minimize voltage ringing at the switch node. In synchronous buck application, this power module achieves over 90% efficiency and low switch node ringing at high output current rating (25A) and high operation frequency (1MHz) under 12V input and 1.3V output condition.
Keywords :
DC-DC power convertors; current density; monolithic integrated circuits; power MOSFET; semiconductor device packaging; NexFET generation 2; computer application; current 25 A; current density DC-DC converter; frequency 1 MHz; integrated NexFET power module; low switch node ringing; monolithically integrated component; power MOSFET; stacked-die package technology; synchronous buck application; voltage 1.3 V; voltage 12 V; voltage ringing minimization; FETs; Logic gates; Multichip modules; Power MOSFET; Switches; Switching circuits;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131615
