Title :
Photon-recycling GaN p-n diodes demonstrating temperature-independent, extremely low on-resistance
Author :
Mochizuki, K. ; Nomoto, Kazuki ; Hatakeyama, Yutaka ; Katayose, Haruhiro ; Mishima, Takeshi ; Kaneda, Noriaki ; Tsuchiya, Takao ; Terano, Akihisa ; Ishigaki, Toshikazu ; Tsuchiya, Takao ; Tsuchiya, R. ; Nakamura, T.
Author_Institution :
Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan
Abstract :
Photon recycling was used to increase ionization of magnesium in GaN p-n diodes by reducing anode radius to 20 μm. On-resistance of GaN p-n diodes (with breakdown voltages of 0.7-0.8 kV) was extremely low (i.e., 0.5 mΩcm2 at 5 V) in the temperature range of 273-373 K. This temperature-independent extremely low on-resistance is a promising characteristic for power-electronics applications such as fast, high-voltage freewheeling diodes.
Keywords :
III-V semiconductors; gallium compounds; ionisation; magnesium; semiconductor diodes; wide band gap semiconductors; GaN; anode radius reduction; breakdown voltages; fast high-voltage freewheeling diodes; magnesium ionization; photon-recycling gallium nitride p-n diodes; power-electronic applications; size 20 mum; temperature 273 K to 373 K; temperature-independent extremely-low on-resistance characteristic; voltage 0.7 kV to 0.8 kV; Anodes; Gallium nitride; Ionization; Magnesium; Schottky diodes; Substrates;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131617
