Title :
Integrated power design platform based on modeling dynamic behavior of GaN devices
Author :
Mizutani, Kenji ; Ueno, Hiroaki ; Kudoh, Yuji ; Nagai, Shuichi ; Inoue, Kaoru ; Otsuka, Nobuyuki ; Ueda, Tetsuzo ; Tanaka, Tsuyoshi ; Ueda, Daisuke
Author_Institution :
Adv. Technol. Res. Labs., Panasonic Corp., Kyoto, Japan
Abstract :
We present a novel integrated design platform for power electronics applications with models that well simulate the dynamic behaviors of devices such as current collapse phenomena in GaN devices and impedance-shifts of motors. The platform utilizes five commercial EDA tools and performs multi-physics simulation for power applications by taking inductance and reactance parasitics in PCB into account. Accuracy of the simulation was evaluated on general IPM motor applications and AC/DC converters. The measured and simulated values showed good agreement in both applications. This platform contributes to the reduction of the tremendous amount of trial and errors in designing power electronics applications, especially when introducing new power devices.
Keywords :
AC-DC power convertors; III-VI semiconductors; gallium compounds; permanent magnet motors; power semiconductor devices; printed circuit layout; semiconductor device models; wide band gap semiconductors; AC-DC converter; GaN; IPM motor application; PCB; commercial EDA tool; current collapse phenomena; dynamic behavior modeling; inductance parasitic; integrated power design platform; motor impedance-shift; multiphysics simulation; power electronic application; reactance parasitic; Integrated circuit modeling; Logic gates; Power electronics; Solid modeling; Temperature measurement; Threshold voltage; Transistors;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131618