In situ nanomechanical measurement of Cu nanowires

Author

Zhang, Y.F. ; Zhang, Clara H. ; Han, X.D. ; Ji, Yuefeng ; Ma, Jiaxin ; Zhang, Zhenhao ; Heiderhoff, L.R.

Author_Institution

Inst. of Microstructure & Property of Adv. Mater., Beijing Univ. of Technol., Beijing, China

fYear

2013

fDate

15-19 July 2013

Firstpage

542

Lastpage

545

Abstract

Copper nanowire is a potential material used as interconnect or component in the micro/ nano devices because of its high electrical and thermal conductivity. Therefore, quantitative measurement of mechanical properties of Cu nanowire is essential to the development of novel micro/nano devices. Here, in situ 3-point bending experiment is performed to measure the elastic properties of Cu nanowire using a SEM/SPM hybrid system. The experimental results show that the elastic modulus of Cu nanowire is significant size dependency in the research range.

Keywords

bending; copper; elastic moduli measurement; electrical conductivity; micromechanical devices; nanoelectronics; nanowires; scanning electron microscopy; scanning probe microscopy; thermal conductivity; SEM-SPM hybrid system; copper nanowires; elastic modulus; elastic properties; electrical conductivity; in situ 3-point bending experiment; in situ nanomechanical measurement; mechanical properties; micro-nano devices; thermal conductivity; Mathematical model; Mechanical factors; Nanowires; Numerical analysis; Probes; Scanning electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the

Conference_Location

Suzhou

ISSN

1946-1542

Print_ISBN

978-1-4799-1241-4

Type

conf

DOI

10.1109/IPFA.2013.6599219

Filename

6599219