Title :
High performance SiC trench devices with ultra-low ron
Author :
Nakamura, T. ; Nakano, Y. ; Aketa, M. ; Nakamura, R. ; Mitani, S. ; Sakairi, H. ; Yokotsuji, Y.
Author_Institution :
ROHM Co., Ltd., Kyoto, Japan
Abstract :
We have developed SiC trench structure Schottky diodes and SiC double-trench MOSFETs. We succeeded in improving device performance by the reduction of the electric field through the introduction of the aforementioned trench structures. The threshold voltage of the trench structure Schottky diode is 0.48V smaller than the planar. Also, the lowest on-resistance in SiC MOSFETs was achieved.
Keywords :
MOSFET; Schottky diodes; electric fields; silicon compounds; wide band gap semiconductors; SiC; double-trench MOSFET; electric field reduction; threshold voltage; trench structure Schottky diode; ultra-low ron; voltage 0.48 V; Electric fields; Epitaxial layers; Logic gates; MOSFETs; Periodic structures; Schottky diodes; Silicon carbide;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131619
