DocumentCode
3038926
Title
High performance SiC trench devices with ultra-low ron
Author
Nakamura, T. ; Nakano, Y. ; Aketa, M. ; Nakamura, R. ; Mitani, S. ; Sakairi, H. ; Yokotsuji, Y.
Author_Institution
ROHM Co., Ltd., Kyoto, Japan
fYear
2011
fDate
5-7 Dec. 2011
Abstract
We have developed SiC trench structure Schottky diodes and SiC double-trench MOSFETs. We succeeded in improving device performance by the reduction of the electric field through the introduction of the aforementioned trench structures. The threshold voltage of the trench structure Schottky diode is 0.48V smaller than the planar. Also, the lowest on-resistance in SiC MOSFETs was achieved.
Keywords
MOSFET; Schottky diodes; electric fields; silicon compounds; wide band gap semiconductors; SiC; double-trench MOSFET; electric field reduction; threshold voltage; trench structure Schottky diode; ultra-low ron; voltage 0.48 V; Electric fields; Epitaxial layers; Logic gates; MOSFETs; Periodic structures; Schottky diodes; Silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
978-1-4577-0506-9
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2011.6131619
Filename
6131619
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