A poly-Si TFT monolithic LC data driver with redundancy

Author

Takafuji, Y. ; Yamashita, T. ; Akebi, Y. ; Toichi, T. ; Shimada, T. ; Awane, K.

Author_Institution

Sharp Corp., Nara, Japan

fYear

1992

fDate

19-21 Feb. 1992

Firstpage

118

Lastpage

119

Abstract

A polysilicon thin-film transistor (TFT) data driver with redundancy is integrated with an active-matrix-liquid-crystal display (AMLCD). Integration of peripheral drives has advantages over conventional AMLCDs such as easy testing and liberation from driver assembly, enabling fabrication of a high-resolution LCD with a small pixel size. Because a defect in a monolithic driver results in a fatal line defect, redundancy is required to improve yield. This data driver consists of blocks of shift registers using CMOS DFF. By using poly-silicon TFTs, a sample hold time of about 40 ns is achieved for 15-V gate voltage and 12-V data signal. These values are sufficient for the LCD for NTSC with 640 data lines.<>

Keywords

driver circuits; liquid crystal displays; redundancy; thin film transistors; 12 V; 15 V; 40 ns; LC data driver; NTSC; active-matrix-liquid-crystal display; data signal; fatal line defect; gate voltage; peripheral drives; pixel size; polysilicon thin-film transistor; redundancy; sample hold time; shift registers; yield; Active matrix liquid crystal displays; Assembly; Capacitors; Driver circuits; Grain boundaries; Laser beam cutting; Liquid crystal displays; Shift registers; Testing; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1992. Digest of Technical Papers. 39th ISSCC, 1992 IEEE International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-0573-6

Type

conf

DOI

10.1109/ISSCC.1992.200440

Filename

200440