Title :
Phase change memory: Development progress and system opportunities
Author_Institution :
Numonyx B.V., Folsom, CA, USA
Abstract :
Phase Change Memory (PCM) technology is demonstrating the capability to enter the broad memory market as a mainstream memory. PCM provides a new set of features, combining components of NVM and DRAM, being at the same time a sustaining and a disruptive technology. In this paper the PCM technology status is reviewed, demonstrating that technology maturity is being achieved. Potential system level usages of PCM are explored, exploiting its unique functionality.
Keywords :
DRAM chips; phase change memories; DRAM; NVM; PCM technology; broad memory market; mainstream memory; phase change memory; Costs; Ferroelectric materials; Iron; Material storage; Nonvolatile memory; Phase change materials; Phase change memory; Production; Random access memory; Vehicles;
Conference_Titel :
Interconnect Technology Conference (IITC), 2010 International
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4244-7676-3
DOI :
10.1109/IITC.2010.5510741
