DocumentCode
3038997
Title
Networked-nanographite wire grown on SiO2 dielectric without catalysts using metal-photoemission-assisted Plasma-enhanced CVD
Author
Sato, Motonobu ; Ogawa, Shuichi ; Kaga, Toshiteru ; Sumi, Haruki ; Ikenaga, Eiji ; Takakuwa, Yuji ; Nihei, Mizuhisa ; Yokoyama, Naoki
Author_Institution
Fujitsu Ltd., Atsugi, Japan
fYear
2010
fDate
6-9 June 2010
Firstpage
1
Lastpage
3
Abstract
We have developed networked-nanographite (NNG) wires as the first step for multilayer graphene interconnects. Photoemission-assisted Plasma-enhanced CVD has been proposed as a growth method on dielectrics without catalysts. The activation energy of carrier conduction for NNG wire was almost the same as that of multilayer graphene exfoliated from highly oriented pyrolytic graphite (HOPG). This means that NNG consists of domains of multilayer graphene. Although we need to improve growth conditions, NNG is one of the candidates for future interconnect materials.
Keywords
graphite; integrated circuit interconnections; nanowires; photoemission; plasma CVD; silicon compounds; NNG wire; SiO2; activation energy; carrier conduction; dielectrics; growth condition; growth method; highly oriented pyrolytic graphite; metal-photoemission-assisted plasma-enhanced CVD; multilayer graphene interconnects; networked-nanographite wire; Conductivity; Dielectric substrates; Electrodes; Integrated circuit interconnections; Nonhomogeneous media; Plasma materials processing; Plasma properties; Plasma sources; Plasma temperature; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference (IITC), 2010 International
Conference_Location
Burlingame, CA
Print_ISBN
978-1-4244-7676-3
Type
conf
DOI
10.1109/IITC.2010.5510745
Filename
5510745
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