• DocumentCode
    3038997
  • Title

    Networked-nanographite wire grown on SiO2 dielectric without catalysts using metal-photoemission-assisted Plasma-enhanced CVD

  • Author

    Sato, Motonobu ; Ogawa, Shuichi ; Kaga, Toshiteru ; Sumi, Haruki ; Ikenaga, Eiji ; Takakuwa, Yuji ; Nihei, Mizuhisa ; Yokoyama, Naoki

  • Author_Institution
    Fujitsu Ltd., Atsugi, Japan
  • fYear
    2010
  • fDate
    6-9 June 2010
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We have developed networked-nanographite (NNG) wires as the first step for multilayer graphene interconnects. Photoemission-assisted Plasma-enhanced CVD has been proposed as a growth method on dielectrics without catalysts. The activation energy of carrier conduction for NNG wire was almost the same as that of multilayer graphene exfoliated from highly oriented pyrolytic graphite (HOPG). This means that NNG consists of domains of multilayer graphene. Although we need to improve growth conditions, NNG is one of the candidates for future interconnect materials.
  • Keywords
    graphite; integrated circuit interconnections; nanowires; photoemission; plasma CVD; silicon compounds; NNG wire; SiO2; activation energy; carrier conduction; dielectrics; growth condition; growth method; highly oriented pyrolytic graphite; metal-photoemission-assisted plasma-enhanced CVD; multilayer graphene interconnects; networked-nanographite wire; Conductivity; Dielectric substrates; Electrodes; Integrated circuit interconnections; Nonhomogeneous media; Plasma materials processing; Plasma properties; Plasma sources; Plasma temperature; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference (IITC), 2010 International
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    978-1-4244-7676-3
  • Type

    conf

  • DOI
    10.1109/IITC.2010.5510745
  • Filename
    5510745