Title :
Passivation of InP-based HBTs for high bit rate circuit applications
Author :
Caffin, D. ; Bricard, L. ; Courant, J.L. ; Chun, L. S How Kee ; Lescaut, B. ; Duchenois, A.M. ; Meghelli, M. ; Benchimol, J.L. ; Launay, P.
Author_Institution :
Lab. de Bagneux, CNET, Bagneux, France
Abstract :
We have studied different materials (silicon nitride, silicon oxide, polyimide) for passivating InP-based HBTs, and their influence on the device electrical performances. Polyimide was found to induce the least degradation after passivation. A double heterojunction InP/InGaAs HBT fabrication process, including polyimide passivation and planarization, has been assembled, allowing us to realize high bit-rate circuits, such as a 36 Gb/s 2:1 multiplexer
Keywords :
III-V semiconductors; bipolar digital integrated circuits; decision circuits; demultiplexing equipment; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit measurement; multiplexing equipment; passivation; 2:1 multiplexer; 36 Gbit/s; InP; InP-InGaAs; InP-based HBTs; SiN; SiNx passivation; SiO2; SiO2 passivation; demultiplexer; device electrical performance; differential architecture; digital circuits; double heterojunction InP/InGaAs HBT fabrication process; high bit rate circuit applications; passivation technology; planarization; polyimide passivation; Bit rate; Circuits; Degradation; Fabrication; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Passivation; Polyimides; Silicon;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600252
