A new enhancement layer to improve copper interconnect performance

Author

Huang, Hung Yi ; Hsieh, C.H. ; Jeng, S.M. ; Tao, H.J. ; Cao, Min ; Mii, Y.J.

Author_Institution

Taiwan Semicond. Manuf. Co., Ltd. (TSMC), Hsinchu, Taiwan

fYear

2010

fDate

6-9 June 2010

Firstpage

1

Lastpage

3

Abstract

This study reports the effect of different barrier on Cu interconnect performance. A thin “enhancement” layer of Ru or Co film is deposited between a PVD Ta(N) liner barrier and a Cu seed layer to improve copper to barrier adhesion and copper gap fill. With the enhancement layer of either Ru or Co, no void is found in dual damascene structure with very thin seed. The electrical performance is improved with more than two times of EM lifetime is observed. The seedless electroplating on the enhancement layers capability will maximize the gap fill window.

Keywords

copper; integrated circuit interconnections; ruthenium; Co film; Cu interconnect performance; PVD Ta(N) liner barrier; Ru film; copper gap fill; copper interconnect performance; copper to barrier adhesion; dual damascene structure; electrical performance; electroplating; enhancement layer; Adhesives; Atherosclerosis; Cities and towns; Copper alloys; Electric resistance; Electronic mail; Semiconductor device manufacture; Semiconductor films; Testing; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference (IITC), 2010 International

Conference_Location

Burlingame, CA

Print_ISBN

978-1-4244-7676-3

Type

conf

DOI

10.1109/IITC.2010.5510762

Filename

5510762