Title :
Near threshold regime in quantum well lasers
Author :
Ribeiro, A. Lopes ; Fernandes, C.F.
Author_Institution :
Dept. of Electr. Eng., Inst. Superior Tecnico, Lisbon, Portugal
Abstract :
A simulation model for the study of the near threshold regime in multiple quantum well (MQW) distributed feedback (DFB) lasers is presented. Allowing the calculation of the carrier confinement, the radiation confinement, the current density and the modal gain for several MQW laser configurations, the method seems to be a powerful tool for the optimization of the laser performance. Results are presented for the 1.3 μm InP/InGaAsP laser
Keywords :
III-V semiconductors; carrier density; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser modes; laser transitions; optimisation; quantum well lasers; semiconductor device models; simulation; μm InP/InGaAsP laser; 1.3 mum; InP-InGaAsP; MQW DFB lasers; MQW laser configurations; carrier confinement; current density; laser performance; modal gain; multiple quantum well distributed feedback lasers; near threshold regime; optimization; quantum well lasers; radiation confinement; simulation model; Carrier confinement; Current density; Distributed feedback devices; Laser feedback; Laser modes; Optimization methods; Performance gain; Power lasers; Quantum well devices; Quantum well lasers;
Conference_Titel :
Electrotechnical Conference, 1996. MELECON '96., 8th Mediterranean
Conference_Location :
Bari
Print_ISBN :
0-7803-3109-5
DOI :
10.1109/MELCON.1996.551572
