Title :
Material potential and scalability challenges of germanium CMOS
Author :
Toriumi, A. ; Lee, C.H. ; Wang, S.K. ; Tabata, T. ; Yoshida, M. ; Zhao, D.D. ; Nishimura, T. ; Kita, K. ; Nagashio, K.
Author_Institution :
Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
This paper overviews the present status of Ge MOSFET technology, particularly focusing on n-FETs in terms of materials science of GeO2/Ge gate stacks and device physics of inversion layer mobility, and then discusses future prospects and fundamental challenges for further miniaturization from the viewpoint of Ge/high-k gate stacks and ET-GeOI MOSFETs.
Keywords :
CMOS integrated circuits; MOSFET; carrier mobility; elemental semiconductors; germanium; germanium compounds; high-k dielectric thin films; ET-GeOI MOSFET; Ge MOSFET technology; Ge/high-k gate stacks; GeO2-Ge; device physics; germanium CMOS; inversion layer mobility; materials science; n-FET; scalability; CMOS integrated circuits; Electron mobility; High K dielectric materials; Logic gates; MOSFET circuits; Silicon;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131631
