Title :
Experimental and theoretical study of electrode effects in HfO2 based RRAM
Author :
Cagli, C. ; Buckley, J. ; Jousseaume, V. ; Cabout, T. ; Salaun, A. ; Grampeix, H. ; Nodin, J.F. ; Feldis, H. ; Persico, A. ; Cluzel, J. ; Lorenzi, P. ; Massari, L. ; Rao, R. ; Irrera, F. ; Aussenac, F. ; Carabasse, C. ; Coue, M. ; Calka, P. ; Martinez, E.
Author_Institution :
CEA-LETI, MINATEC, Grenoble, France
Abstract :
In this work, the impact of Ti electrodes on the electrical behaviour of HfO2-based RRAM devices is conclusively clarified. To this aim, devices with Pt, TiN and Ti electrodes have been fabricated (see Fig. 1). We first provide several experiments to clearly demonstrate that switching is driven by creation-disruption of a conductive filament. Thus, the role of TiN/Ti electrodes is explained and modeled based on the presence of HfOx interfacial layer underneath the electrode. In addition, Ti is found responsible to activate bipolar switching. Moreover, it strongly reduces forming and switching voltages with respect to Pt-Pt devices. Finally, it positively impacts on retention. To support and interpret our results we provide physico-chemical measurements, electrical characterization, ab-initio calculations and modeling.
Keywords :
ab initio calculations; electrochemical electrodes; hafnium compounds; platinum; random-access storage; titanium; titanium compounds; HfOx; Pt electrodes; Pt-Pt; RRAM devices; Ti electrodes; TiN electrodes; TiN-Ti; ab-initio calculations; bipolar switching; conductive filament; creation disruption; electrical behaviour; electrical characterization; interfacial layer; physico-chemical measurements; Atomic measurements; Data models; Electrodes; Hafnium compounds; Performance evaluation; Switches; Tin;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131634
