Title :
A 5 V-only 16 Mb flash memory with sector-erase mode
Author :
Jinbo, T. ; Nakata, H. ; Hashimoto, K. ; Watanabe, T. ; Ninomiya, K. ; Urai, T. ; Koike, M. ; Sato, T. ; Kodama, N. ; Oyama, K.-I. ; Okazawa, T.
Author_Institution :
NEC Corp., Sagamihara, Japan
Abstract :
A 5-V-only 16-Mb CMOS flash memory with sector erase mode which uses 0.6- mu m double-layer metal CMOS technology is described. The optimized memory cell and channel erase are keys to 5-V-only operation. With this erase method, positive pulses are applied to the channel area and negative high-voltage pulses are applied to a control gate using row decoders, realizing a 512-word sector erase.<>
Keywords :
CMOS integrated circuits; EPROM; VLSI; 0.6 micron; 16 Mbit; 5 V; CMOS; EEPROM; ULSI; cell erase; channel erase; double-layer metal; flash memory; row decoders; sector-erase mode; Charge pumps; Circuits; Decoding; Delay; EPROM; Flash memory; Latches; Pulse amplifiers; Switches; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 1992. Digest of Technical Papers. 39th ISSCC, 1992 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0573-6
DOI :
10.1109/ISSCC.1992.200458
