Title :
Modeling of electron transport in resonant-tunneling heterostructures on a base of wide bandgap gallium nitride´s combinations
Author :
Egorkin, I.V. ; Kapaev, V.V. ; Tsarik, A.K. ; Shmelyov, S.S. ; Zhuravlyov, N.M.
Author_Institution :
Moscow Inst. of Electron. Technol., Moscow, Russia
Abstract :
Numerical method for calculation of electron transport in GaN/AlGaN resonant-tunneling heterostructures is developed. It has been shown with using this method that the external electric field symmetrizes the potential profile of resonant-tunneling diode and increases a value of transparency coefficient´s maximum.
Keywords :
III-V semiconductors; electron transport theory; gallium compounds; resonant tunnelling diodes; GaN-AlGaN; electron transport; numerical method; resonant-tunneling diode; resonant-tunneling heterostructures; wide bandgap gallium nitride; Aluminum gallium nitride; Electronic mail; Gallium nitride; Materials; Mathematical model; Resonant tunneling devices; Semiconductor diodes;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632924
